Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates

In this letter we report the first growth of Zn1−xMnxTe epitaxial films. The films were grown by hot wall epitaxy on 2° misoriented (001) GaAs substrates up to a Mn concentration of 70%. The Mn content was determined by optical reflection and x-ray diffraction. All the epilayers (0.0≤x≤0.7) grew in the [001] direction in the zinc-blende structure. The full width at half maximum of the (004) reflex of the x-ray rocking curves proved the good crystalline quality of the grown layers and increased monotonically as the Mn content increased. The relative tilt between epilayer and substrate was also determined from high resolution x-ray diffraction.