Answers are grounded in this paper and cite their sources.
An improved technique is described for selectively etching ’’windows’’ in GaAs crystals with Ga1−xAlxAs (0.30⩽x⩽ 0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility.
No takes yet. Share an insight, caveat, or question.
J. J. LePore (1980) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: