December 1, 1980Journal of Applied Physics97 citations

An improved technique for selective etching of GaAs and Ga1−xAlxAs

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Abstract

An improved technique is described for selectively etching ’’windows’’ in GaAs crystals with Ga1−xAlxAs (0.30⩽x⩽ 0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility.

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J. J. LePore (1980) studied this question.

synapsesocial.com/papers/6a859839c670f88be7ae6f23 https://doi.org/10.1063/1.327598

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5Preferential Etching and Etched Profile of GaAs1971 · 152 citations

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