We describe the growth and optical emission from ultrathin strained InP quantum wells grown on GaP substrates using gas-source molecular-beam epitaxy. The InP thickness was varied between 0.5 and 1.6 monolayers. Intense photoluminescence was emitted from the structures; time-resolved measurements indicate rather long carrier lifetimes of about 19 ns. With decreasing InP coverage, the emission lines are shifted from 2.18 to 2.28 eV due to quantum size effects. We explain the emission as spatially indirect recombination of electrons from the GaP X valleys with holes in InP and its phonon replicas.
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Hatami et al. (2001) studied this question.
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