We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organized island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots is peaked at about 2.0 eV, blueshifted by 0.6 eV from the band gap of bulk InP due to strain, quantum size effects, and possibly Ga interdiffusion.
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Hatami et al. (2001) studied this question.
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