A self-aligned GaAs/GaAlAs tapered laser with a tapered quantum well active region is described. The laser is grown by low pressure metalorganic chemical vapor deposition in a horizontal reactor. The effect of the tapered quantum well is in concentrating the injected charges in the modal volume and thus 6.2 mA threshold current is obtained. At a high power level the laser operates in single longitudinal and transversal modes.
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Fekete et al. (1987) studied this question.
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