We have used reactive metal interlayers to suppress anion outdiffusion at Au-CdTe junctions and thereby to alter the formation of deep interfacial states. Using soft x-ray photoemission and luminescence spectroscopies, we report a dramatically reduced p-type band bending and demonstrate that deep levels observed directly at the interface are responsible for the chemically induced electrical behavior.
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Shaw et al. (1988) studied this question.
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