A simple process sequence for the fabrication of passivated mesa diode arrays for photovoltaic characterization of single/polycrystalline silicon substrates is described. These diodes are used to measure a variety of substrate and cell parameters including resistivity, minority-carrier diffusion length, Voc, Jsc, fill factor, and current-voltage characteristics for analysis of the electronic transport properties. Evaluation techniques which use these diodes for determining spatial variations in the material/device charateristics are described. These devices are also suitable for characterizing various cell fabrication processes and for analysis of crystal defects on the solar cell characteristics.
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Bhushan Sopori (1988) studied this question.