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May 1, 2004Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

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Authors

CPC. PoblenzSoraa (United States)PWPatrick WaltereitUniversity of California, Santa BarbaraSRSiddharth RajanDalhousie University

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Poblenz et al. (2004) studied this question.

synapsesocial.com/papers/6a85c09a37bcb8373dadbaa7https://doi.org/10.1116/1.1752907
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Also Consider

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  4. 4Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE2004 · 104 citations
  5. 5Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy1999 · 154 citations