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October 1, 1976Philosophical magazine

Oxygen precipitation and the generation of dislocations in silicon

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Authors

TTT. Y. TanUniversity of Electronic Science and Technology of ChinaWTW. K. TiceIBM (United States)

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Tan et al. (1976) studied this question.

synapsesocial.com/papers/6a85c09cfc70cb81dc20406fhttps://doi.org/10.1080/14786437608223798
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Oxygen Content of Silicon Single Crystals1957 · 254 citations
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  3. 3Useful Properties of Dark‐Field Electron Images1965 · 38 citations
  4. 4Neutron irradiation damage in molybdenum1971 · 160 citations