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The electrical characteristics of directly bonded GaAs/InP heterointerfaces have been investigated for the first time. The mirror-polished surfaces of GaAs and InP wafers were put face to face and bonded by heat treatment at temperatures ranging from 450 to 700 °C. The wafers were successfully bonded without using any solders at all the temperatures tested. 1.3 μm InP/GaInAsP lasers were fabricated on GaAs substrates using direct bonding at 450 °C, and room-temperature lasing operation has been achieved with the threshold current identical to that of conventional InP lasers.
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Wada et al. (1993) studied this question.
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