The spatial pattern of current filaments generated by impurity breakdown has been investigated in a semiconductor for the first time as a function of the magnetic field. Large asymmetries of shallow impurity excited-state population were observed occurring at opposite edges of a filament normal to the magnetic field. Deformation of filament boundaries evolves at very low field strengths being comparably small to those which destabilize current flow yielding current fluctuation and chaos.
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Brandl et al. (1989) studied this question.
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