High-resolution electron-energy-loss spectroscopy of thin films of C₆₀ on Si(100)

We report on the first measurements by high-resolution electron-energy-loss spectroscopy of the elementary excitations of C₆₀ thin films deposited on Si(100). By varying the primary electron energy, the spectrum extending from the far ir to the far vuv has been investigated. Many spectral features are comparable to earlier observations by photon, photoelectron, and neutron spectroscopies. New molecular excitations are revealed including the lowest electronic excitation at 1.5 eV and collective excitations at 6.3 and 28 eV.