In this paper, a novel 60-GHz monolithic star mixer using the gate-drain-connected pseudomorphic high electron-mobility transistor (pHEMT) diodes instead of conventional drain-source-connected diodes is proposed. The mixer is fabricated using 0.1-/spl mu/m GaAs pHEMT process. The measurements show the conversion loss of 13-18 dB over the full V-band (50-75 GHz), local oscillator to RF isolation of approximately 35 dB, and the input 1-dB compression of approximately 3 dBm.
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Yeom et al. (2005) studied this question.
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