A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-12-GHz IF is described. Two types of diodes have been used: the first used the gate-to-channel junctions of 0.2- mu m*80- mu m InGaAs HEMTs; and the second used Schottky diodes realized in HBT technology. The baluns are Marchand-like coplanar structures.>
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Maas et al. (1993) studied this question.
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