A comparatively simple non-linear analytical theory of the IMPATT diode has been developed which accounts for a finite thickness of the avalanche region. Single and double drift region encapsulated and non-encapsulated diodes have been investigated in reflection amplifiers where the circulator is an integral part of the broad-band matching network. It is demonstrated that large bandwidths are possible and that the IMPATT diode amplifier has some important non-linear properties in common with the TWT.
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Nilsson et al. (1973) studied this question.
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