The ionization coefficient of carriers in gallium arsenide has been measured over the temperature range − 20°c to +80°c. It has been found to obey the relationship α α∞exp { −(b/ )): } where both α∞and b are functions of temperature. The temperature coefficients of α∞ and b obtained from these measurements have boon used to predict the temperature coefficient of gallium arsenide p-n junctions, and these values have been found to be in good agreement with reported observations.
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Hall et al. (1968) studied this question.
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