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We have analyzed the metastable defects in undoped semi-insulating GaAs from a new perspective, that of the electronic Raman scattering of holes generated on the compensated, residual shallow acceptors by cw neodymium-doped yttrium aluminum garnet laser radiation. The scattering results, when correlated with the several photoquenching phenomena, provide information on (i) the charge state of EL2 defects before they undergo the transition from a normal to a metastable state, and (ii) the relationship between AsGa compensating centers and metastable EL2 defects.
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Bray et al. (1986) studied this question.
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