The velocity-field characteristic for electrons in GaAs has been measured in the negative differential mobility region between 4.5 and 11 kV/cm by a new direct method involving probe measurements on the surface of a bulk GaAs two-port amplifier. The measurements were taken on GaAs of resistivity in the 500–1000 Ω-cm range.
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Fay et al. (1969) studied this question.
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