A method is presented for the non‐destructive determination of centroid (mean) depths of shallow standard profiles (ion implanted, diffused, square) of dopant impurities in lighter materials by comparative X‐ray fluorescence measurement at different take‐off angles. The method is based on an analytical expression which links the ratio of two fluorescence signals to the distribution moments of the impurity profile. It is also shown how this method can be used for the identification of unknown standard profiles as well as for the determination of p–n junction depths in Si wafers.
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Gries et al. (1981) studied this question.
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