Universal band structures for group-V elements and IV-VI compound semiconductors

This is the authors' abstract. We don't add key points for this paper.

The tight-binding band structures of the group-V elements As, Sb, and Bi and the IV-VI compound semiconductors have been found by the fitting of previous calculations and photoemission data. The two-center interactions are found to scale with bond length d. The ppσ interaction scales as d^-2.6 and the ssσ interaction as d^-4.6. In the tetravalent diamond semiconductors both s and p interactions scale as d^-2. The different scaling law reflects bonding differences; both s and p electrons are involved in bonding in diamond while only p electrons are used in the group-V and IV-VI compound solids. The states of the group-V elements are reasonably well reproduced with only first-neighbor interactions. Second-neighbor interactions or excited s* and d* states are needed to fit the narrow gaps of the IV-VI compound semiconductors. The electronic structure of the rocksalt phase of InSb is also calculated and used to illustrate the differences in bonding between III-V and IV-VI compounds.