Enhanced luminescence in top-gate-type organic light-emitting transistors

We have studied the structure and operating characteristics of top-gate-type organic light-emitting transistors (OLETs). The OLET is composed of an anode (source), organic layers including an organic electroluminescent (EL) layer, a cathode (drain) being opposed to the anode, and a gate, formed outside of the region between the anode and the cathode. EL characteristics of the OLET show that the luminescent intensity from the organic layers can be balanced by applying the bias voltage of the gate electrode.