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Telegraph noise, i.e., two-level fluctuations (TLF), in the magnetoresistance of Er-doped GaAs has been used to probe the magnetic moment of the small ErAs clusters formed during the molecular beam epitaxy growth process. At high temperatures the TLF are thermally activated but below 350 mK tunneling of the magnetization dominates.
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Coppinger et al. (1995) studied this question.
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