Preparation of Porous Silicon P-Type and Thermal Diffusivity Measurement Using Photoacoustic Technique

Porous silicon (PSi) layers were formed on a p-type Si wafer. Electrochemical method was used to prepare 36 samples with three values of current density (10, 20 and 30) mA/cm2, each involved ( 20, 40, 60 and 80) min etching times the samples were heated to three selected temperatures of 100, 200 and 350°C in three groups. The first group covers 12 samples corresponding to 10 mA/cm2 while the other two correspond to the remaining values of current density respectively. Each annealing process for these sample groups lasted three hours in ambient air. The morphology of the layers, before and after annealing, formed by this method was investigated by Scanning Electron Microscope (SEM). Photoacoustic technique (PA) was employed carry out Thermal Diffusivity (TD) measurements. In this study, the porosity and thickness porous increased with increasing current density and etching time. While the thermal diffusivity TD increases with increasing annealing temperature.