Halo Ion Implantation Effect on Extension Profile Studied by Scanning Capacitance Microscopy Using All-Metal Probe under FM Control

By using an all-metal probe under frequency modulation (FM) control, we developed a scanning capacitance microscope (FM-SCM), and applied it to a study of the halo ion implantation effect on two-dimensional (2D) extension profiles of cross-sectional p -channel metal-oxide-semiconductor field effect transistors. With the use of the all-metal probe under FM control, we attain sub-5-nm spatial resolution for the p - n junction in the ∂ C /∂ V image. The built-in depletion layer presumed by the ∂ C /∂ V image is narrower for the higher dose sample. The composition images of ∂ C /∂ V and topography allow us to determine extension depth X J and extension-gate overlap length X OV , both of which decrease with increase of the halo implant dose. Furthermore, the decrease of X OV is steeper than that of X J , clearly implying the anisotoropic effect of halo ion implantation.