A Spreading Resistance‐Based Technique for Two‐Dimensional Carrier Profiling

A special sample preparation and measurement procedure has been developed to measure two‐dimensional carrier profiles in silicon by spreading resistance profiling (SRP) with 50 nm resolution. The raw data can be interpreted directly in terms of two‐dimensional contour lines of the junction position. Furthermore, a simulation program has been developed that allows us also to obtain the lateral diffusion profiles from the measurements. Results are shown for 20 keV boron implants, 400 keV and 1 MeV phosphorus implants as well as boron implants subjected to different annealing steps (furnace and short‐time anneal). An enhanced lateral diffusion in the initial stages of the furnace annealing has been found.