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We report a new method to remove the effects of fluctuations in the pattern dimensions caused by statistical variations in the impinging photons/particles at the nanoscale. By using precisely size-controlled nanoparticles as a template in conjunction with resist reflow, the method is capable of reducing the transistor source, drain contact hole dimensions to <20 nm, while remaining compatible with currently available fabrication methods.
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Morakinyo et al. (2014) studied this question.
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