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Non-ohmic behavior of the current voltage characteristic was noted on high-resistivity silicon carbide crystals with fused tungsten contacts. In order to explain the shapes and magnitudes of these characteristics the theory of two-carrier space-charge-limited currents was employed. Calculations with this treatment gave a common electron and hole lifetime of ∼5×10−5 sec, a recombination cross section of ∼4×1019 cm2, and a current enhancement factor of ∼103.
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Ozarow et al. (1962) studied this question.
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