A detailed microscopic model is worked out that explains the Fermi level behaviour for the low-temperature formation of Schottky barriers. It is based on a renormalized molecule description of the chemisorption at low coverage. The Fermi level drop after saturation and its final pinning position are shown to be determined by electrostatic screening effects. The situation near monolayer coverage is analysed and the onset of metallization is discussed.
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Lefebvre et al. (1989) studied this question.
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