Electronic properties of the EC-0.6 eV electron trap in n-type GaN

The electronic properties of the EC-0.6 eV electron trap in n-type GaN are investigated by deep-level transient spectroscopy with the help of an experimental method relying on space-charge depth modulation [D. Pons, J. Appl. Phys. 55, 3644 (1984)]. The free energy and capture cross-section temperature dependence are determined between 250 and 330 K. The capture cross section is found at σn=8×10−16 cm2, corresponding to a neutral center with a degeneracy factor of gn≤4.