Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 15, 1987Physical review. B, Condensed matter

Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82)

View Full Paper
Ask AI
Bookmark
Share

Authors

FXF. XuSinopec (China)JJJ. J. JoyceLos Alamos National LaboratoryMRM. W. RuckmanIsland Institute

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Xu et al. (1987) studied this question.

synapsesocial.com/papers/6a8658a4fbd12792c963971ehttps://doi.org/10.1103/physrevb.35.2375
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Interdiffusion and reaction at the Fe/GaAs(110) interface1986 · 103 citations
  2. 2Palladium on GaAs: A reactive interface1983 · 45 citations
  3. 3Unified defect model and beyond1980 · 646 citations
  4. 4Modeling of interface reaction products with high-resolution core-level photoemission1985 · 13 citations
  5. 5New and unified model for Schottky barrier and III–V insulator interface states formation1979 · 933 citations