We report synchrotron radiation photoemission studies of room-temperature deposition of iron on cleaved GaAs(110). Core-level and valence-band spectra indicate substrate disruption with Fe, Ga, and As atomic intermixing. Detailed analysis shows that reacted regions develop which contain significant amounts of both Ga and As for nominal Fe coverages below {~}3 A{}. Coverage-dependent studies reveal that two different Fe---As bonding configurations form with the first phase being very thin and the second (dilute) Fe-As component persisting to high coverage. In contrast, Fe---Ga bonding does not produce a well-defined chemical environment. Valence-band results indicate that Fe metal starts to form by approximately 5 A{}, although the core-level results show that significant amounts of As are always present in the surface region. In contrast, Ga appears to be trapped near the original interface. Recent reports of magnetic properties and epitaxial growth of Fe on GaAs are evaluated in the context of the present results.
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Ruckman et al. (1986) studied this question.
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