A 16-{} Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×{}7) at about 100^∘{}C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp d-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point L. The bulk valence-band dispersions of Ag were reevaluated.
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Wachs et al. (1984) studied this question.
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