Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si₂(CH₃)₆ Using Hall-Effect Measurements

Without any assumption of the number of types of impurities, the densities and energy levels of donors in undoped 3C-SiC grown from Si 2 (CH 3 ) 6 are precisely determined by the simple graphical method proposed here, using the temperature dependence of the majority-carrier concentration obtained by Hall-effect measurements. We detect at least three types of donors whose energy levels (Δ E D ) are 7–14 meV, 46–54 meV and 97–120 meV as measured from the conduction band, although it was reported that Δ E D for nitrogen atoms decreased with an increase in the donor density from ∼50 meV to ∼15 meV. In addition to the ∼15 meV donor that was reported in undoped 3C-SiC grown from a mixture of SiH 4 and C 3 H 8 , at least two donor levels are detected in undoped epilayers grown from Si 2 (CH 3 ) 6 . From the viewpoints of donor density and compensation ratio, the quality of undoped 3C-SiC grown from Si 2 (CH 3 ) 6 is better than that of undoped 3C-SiC grown from a mixture of SiH 4 and C 3 H 8 .