Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC

The electrical properties of nitrogen-doped n -type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures ranging from 10 to 1000 K. The activation energy of the N-donors was obtained from the temperature dependence of carrier density. The donor-density dependence of the activation energies of donors in N-doped 3C-SiC is quite different from that of unintentionally-doped ones, and the donors in unintentionally-doped 3C-SiC were proved not to be nitrogen atoms.