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Transient luminescence spectra are investigated in highly photoexcited CdS nanocrystals (average radii 5.4–100 nm) embedded in glass. Luminescence-intensity kinetics exhibits distortion attributed to carrier-temperature-activated nonradiative recombination due to multiphonon emission. The distortion enhances with reduced crystallite size indicating that the photomodified semiconductor-glass interface originates deep traps with localization barrier of 130 meV.
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Juršėnas et al. (1997) studied this question.
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