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The occurrence of some types of configurationally bistable thermal donors with negative effective correlation energy (U < 0), that are formed at initial stages of heat treatment at T ≦ 673 K of the oxygen containing germanium crystals is presented. The study of the equilibrium electron occupation function of three transforming thermal donors types enables one to obtain the values of U and the probability of double electron occupancy. By means of the kinetics of thermal donor transformation processes between two equilibrium configurations the activation energy and the cross-section for extrinsic self-trapping of charge carriers are determined. The results obtained are discussed in terms of very large lattice relaxation phenomena.
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Litvinov et al. (1988) studied this question.
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