Rutherford backscattering and Hall measurements for oxygen- and/or boron-implanted SOS samples have revealed that the oxygen implantation into the sapphire substrate through the silicon layer improves the crystalline quality in the surface region after annealing and is effective in suppressing the anomalous increase of the carrier concentration due to the aluminum diffusion from the substrate during annealing.
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Yamamoto et al. (1979) studied this question.