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February 1, 1963Journal of Applied Physics

Structure and Origin of Stacking Faults in Epitaxial Silicon

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Authors

RFR. H. FinchHQH. J. QueisserGoethe University FrankfurtGTG. ThomasCentro Científico Tecnológico - Tandil

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Finch et al. (1963) studied this question.

synapsesocial.com/papers/6a865b85bc4cc88ab583373ahttps://doi.org/10.1063/1.1702622
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]1961 · 158 citations
  2. 2Stacking Faults in Epitaxial Silicon1962 · 58 citations
  3. 3X-Ray Observations of Partial Dislocations in Epitaxial Silicon Films1962 · 29 citations
  4. 4Electron diffraction from crystals containing stacking faults: I1957 · 253 citations
  5. 5Electron Microscopy of Prismatic Dislocations in Silicon1962 · 23 citations