Si-H and N-H vibrational properties in glow-discharge amorphous SiNx:H films (0<x<1.55)

Amorphous SiNx:H films were prepared by rf glow discharge of SiH4-NH3 mixtures at 300 °C, and the SiH, NH, and SiN vibrational absorptions were investigated as a function of x. The stretching absorption profiles due to SiH and SiN bonds are reproduced by a superposition of two components at around 2000 and 2100 cm−1, and of three components at around 750, 840, and 960 cm−1, respectively. The dependence of these intensities on x was examined by means of a generation probability analysis on the basis of the random bonding model including SiH and NH bonds which play an important role in the film growth mechanism.