Time-resolved photoconductivity measurements with subnanosecond time resolution are applied to study the electric field profile in amorphous silicon solar cells in the range from 0.3 V forward to 0.8 V reverse bias. The method is used for a comparison of state-of-the art devices with different junction design. Optical and electrical contributions to the device performance are discussed and the limitations in improving the performance by use of a-SiC:H window layers are pointed out.
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Könenkamp et al. (1990) studied this question.
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