The correlation between Si-H 2 bond density and electron drift mobility in a-Si:H films has been investigated by using the dependence of the film properties on the silane gas pressure in mercury-sensitized photochemical vapor deposition. It was found that the electron drift mobility decreased with increasing the Si-H 2 bond density, when the hydrogen contents were about the same amount.
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Kamimura et al. (1988) studied this question.
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