Metal-semiconductor junctions and amorphous-crystalline heterojunctions using B-doped hydrogenated amorphous silicon

Investigated are the current-voltage characteristics of metal (Au, Mg)/B-doped hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (n+, p+) diodes for various doping levels of B in a-Si:H. From junction studies we determine the conduction type of B-doped a-Si:H on the basis of ‘‘dominant’’ carrier concentration, and find that the p-n transition occurs at B2H6/SiH4∼10−6 although the conductivity minimum appears at B2H6/SiH4∼10−4.