Doping of boron into Si:H thin films by means of glow-discharge decomposition of SiH4 and B2H6 pre-mixed gas has been studied. Optical and electrical properties of these B-dopen Si:H films have been measured, and crucially discussed in relation to the contents of bonded H and incorporated B atoms in the specimens. A new deposition condition has been presented for obtaining “the p-type” film which has a wide optical gap amounting to 1.79 eV and dark conductivity exceeding 10-1 Ω-1cm-1.
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Matsuda et al. (1981) studied this question.
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