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Porous boron carbonitride nanotubular fibers with BCN stoichiometry and homogeneous B, C, and N species distribution were fabricated via the CVD method. Spatially resolved cathodoluminescence measurements on individual nanostructures revealed intense ultraviolet emission centered at 319 nm, suggesting the characteristics of a semiconductor with a band gap of 3.89 eV. It is believed that the present nanostructures may have a variety of applications in ultraviolet optical devices, hydrogen storage systems, and field emission apparatus.
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Yin et al. (2005) studied this question.
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