The authors have calculated the collision strength for the transition 3s 2 1 S to 3s3p 3 P 0 in Si III using the R-matrix method. Elaborate configuration wavefunctions are used to represent the twelve lowest target states which are included in the expansion of the total wavefunction. Reaction rates are calculated in the temperature range 5000-250000K. Resonance structure considerably increases the rate coefficients compared with other work where these effects are omitted.
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Baluja et al. (1980) studied this question.
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