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A solid iron source was used in a limited reaction processing (LRP) system to deposit beta -FeSi/sub 2/ selectively and epitaxially onto patterned silicon wafers. The layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). Selective and mostly epitaxial deposition of semiconducting iron disilicide has been obtained by LRP and a solid Fe source producing chlorinated metal species. The films are formed by columns epitaxially oriented with the substrate. Electrical and optical characterization show that the best transport properties are obtained for samples grown at 850 degrees C. The direct bandgap transition was observed and hole conductivity with mobility values above 50 cm/sup 2//V/s were obtained.>
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Regolini et al. (1992) studied this question.
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