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December 15, 1985Applied Physics Letters

Measurement of the band gap of GexSi1−x/Si strained-layer heterostructures

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Authors

DLD. V. LangAT&T (United States)RPR. PeopleAlcatel Lucent (Germany)JBJ. C. BeanStevens Institute of Technology

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Lang et al. (1985) studied this question.

synapsesocial.com/papers/6a82b478129689dedc133645https://doi.org/10.1063/1.96271
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Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy1984 · 680 citations
  2. 2Intrinsic Optical Absorption in Germanium-Silicon Alloys1958 · 680 citations
  3. 3Modulation doping in GexSi1−x/Si strained layer heterostructures1984 · 302 citations
  4. 4Strained-layer superlattices from lattice mismatched materials1982 · 431 citations