Low Pressure Silicon Epitaxy

In a reduced pressure epitaxial system using SiH 4 , growth parameters and autodoping from a heavily doped substrate were investigated as a function of pressure. It was found that the activation energies of epitaxial growth are about 43 and 11 kcal/mole for 80 and 760 Torr, respectively. Both vertical and lateral autodoping are remarkably reduced by epitaxial growth under low pressure. A simple one‐dimensional gas diffusion model is proposed to explain the autodoping behavior in low pressure epitaxy.