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Coaxial three-layer nanocables consisting of a crystalline silicon core, a silicon oxide interlayer, and a carbon outer sheath (see Figure) have been obtained using a combination of laser ablation and thermal evaporation. These novel multilayer nanostructures, which are interesting candidates for nanoelectronic devices, are characterized using a variety of techniques. A growth mechanism is proposed.
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Shi et al. (2000) studied this question.
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