Recombination of externally excited (injected) charge carriers in a semiconductor can strongly change the temperature of the remaining carriers. The temperature is increased if the recombination rate decreases with energy and/or degenerate statistics applies. The normalized heating rate [d(kBT)dt]kBTτ^-1 (the recombination rate) will thus drastically reduce energy relaxation (cooling) of hot carriers at low temperatures. Cooling may occur if the recombination rate increases with energy.
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Bimberg et al. (1985) studied this question.